期刊
ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 17, 页码 15467-15477出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b21895
关键词
oxygen vacancies; heterojunction films; microbattery method; in situ; interfacial charge transfer; photoelectrochemical property
资金
- National Nature Science Foundation of China [21471054]
Non-stoichiometric ratio semiconductor materials have exhibited excellent performance in energy conversion and storage fields. However, the hydrogen treatment method that is commonly used to introduce oxygen vacancies is expensive and dangerous. In this paper, a novel microbattery method using Zn powder and Fe powder as reductant has been developed to synthesize the oxygen vacancy modified WO3-x films and oxygen-deficient heterojunction films (ZnWO4-x/WO3-x and Fe2O3-x/WO3-x) at room temperature. The as-prepared WO3-x and ZnWO4-x/WO3-x heterojunction films exhibit improved photoelectrochemical performance. It is worth noting that this microbattery method can quickly introduce oxygen vacancies into semiconductor materials, including powders and films at room temperature.
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