期刊
PHYSICAL REVIEW MATERIALS
卷 3, 期 3, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.3.031201
关键词
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资金
- Vannevar Bush Faculty Fellowship program by the U.S. Department of Defense [N00014-16-1-2814]
- U.S. Army Research Office [W911NF-16-1-0280]
- U.S. Department of Energy [DEFG02-02ER45994]
- UCSB MRSEC, National Science Foundation (NSF) [DMR 1720256]
(001)-oriented thin films of the three-dimensional Dirac semimetal cadmium arsenide can realize a quantum spin Hall insulator and other kinds of topological physics, all within the flexible architecture of epitaxial heterostructures. Here, we report a method for growing (001) cadmium arsenide films using molecular beam epitaxy. The introduction of a thin indium arsenide wetting layer improves surface morphology and structural characteristics, as measured by x-ray diffraction and reflectivity, atomic force microscopy, and scanning transmission electron microscopy. The electron mobility of 50-nm-thick films is found to be 9300 cm(2)/Vs at 2 K, comparable to the highest-quality films grown in the conventional (112) orientation. This work demonstrates a simple experimental framework for exploring topological phases that are predicted to exist in proximity to the three-dimensional Dirac semimetal phase.
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