期刊
ANNALEN DER PHYSIK
卷 528, 期 7-8, 页码 551-559出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/andp.201600006
关键词
MoSe2 monolayer; nonlinear optics; second-order susceptibility; laser-induced damage threshold
资金
- Priority Research Centers Program through the National Research Foundation of Korea (NRF) [2009-0093818]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) [2015R1D1A3A03019609]
- Basic Research Lab Program through the National Research Foundation of Korea (NRF) [2014R1A4A1071686]
- Korean government
- National Research Foundation of Korea [2009-0093818, 22A20130011018, 2015R1D1A3A03019609, 21A20131100002] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
In this study, we utilized picosecond pulses from an Nd:YAG laser to investigate the nonlinear optical characteristics of monolayer MoSe2. Two-step growth involving the selenization of pulsed-laser-deposited MoO3 film was employed to yield the MoSe2 monolayer on a SiO2/Si substrate. Raman scattering, photoluminescence (PL) spectroscopy, and atomic force microscopy verified the high optical quality of the monolayer. The second-order susceptibility.(2) was calculated to be similar to 50 pm V-1 at the second harmonic wavelength lambda(SHG)similar to 810 nm, which is near the optical gap of the monolayer. Interestingly, our wavelength-dependent second harmonic scan can identify the bound excitonic states including negatively charged excitons much more efficiently, compared with the PL method at room temperature. Additionally, the MoSe2 monolayer exhibits a strong laser-induced damage threshold similar to 16 GW cm(-2) under picosecond-pulse excitation. Our findings suggest that monolayer MoSe2 can be considered as a promising candidate for high-power, thin-film-based nonlinear optical devices and applications.
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