期刊
RESULTS IN PHYSICS
卷 13, 期 -, 页码 -出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.rinp.2019.102233
关键词
Laser slicing; Lift-off; InGaN LED; GaN-on-GaN
A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off process did not require any special release layers in the epitaxial structure. GaN film with a thickness of 5 mu m and an InGaN LED epitaxial device structure was lifted off a GaN substrate and transferred onto a copper substrate. The electroluminescence of the LED chip after the laser slicing lift-off was demonstrated.
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