相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Close spaced vapor transport deposition of Cu2ZnSnS4 thin films: Effect of iodine pressure
A. Sagna et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2016)
Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III-V photovoltaics
Andrew J. Ritenour et al.
ENERGY & ENVIRONMENTAL SCIENCE (2015)
Correlation between full width at half maximum (FWHM) of XRD peak with residual stress on ground surfaces
M. Vashista et al.
PHILOSOPHICAL MAGAZINE (2012)
Morphological, compositional, structural, and optical properties of Si-nc embedded in SiOx films
J. Alberto Luna Lopez et al.
NANOSCALE RESEARCH LETTERS (2012)
Mobility-lifetime product in epitaxial GaAs X-ray detectors
G. C. Sun et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (2007)
Effect of substrate etching on electrical properties of electrochemically deposited CuO
Longcheng Wang et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2007)
Characterization of GaAs grown by the close-spaced vapor transport technique, using atomic hydrogen as the reactant
E Gómez-Barojas et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2003)
Growth and characterization of GaAs p-n junctions obtained by the CSVT technique using atomic hydrogen
F Silva-Andrade et al.
MODERN PHYSICS LETTERS B (2001)
Growth of carbon nanotubes by chemical vapor deposition
M Jung et al.
DIAMOND AND RELATED MATERIALS (2001)
Nitrogen-induced levels in GaAs1-xNx studied with resonant Raman scattering
HM Cheong et al.
PHYSICAL REVIEW B (2000)