期刊
ADVANCED ELECTRONIC MATERIALS
卷 5, 期 6, 页码 -出版社
WILEY
DOI: 10.1002/aelm.201800957
关键词
graphene; graphene; germanium heterostructure photodetector; graphene; germanium hybrid photodetector; heterostructure; hybrid structure; photodetector; Schottky junction
资金
- Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) [2013M3A6B1078873]
- Creative Materials Discovery Program of the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning (MOSIP), Korea [2015M3D1A1068062]
- Nano Materials Technology Development Program of the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning (MOSIP), Korea [2016M3A7B4909942]
A high-responsivity near-infrared photodetector is demonstrated using a transparent ZnO top gate-modulated graphene/Ge Schottky junction. The responsivity of a graphene/Ge junction photodetector characterized with a scanning photocurrent microscopy system is improved to 0.75 A W-1. This result is 5 to 35 times higher than the previously reported graphene/Ge photodetectors that did not use gate modulation. The detectivity is also improved to 2.53 x 10(9) cm Hz(1/2) W-1 at V-g = -10 V from 0.43 x 10(9) cm Hz(1/2) W-1 at V-g = 0 V. The performance of this gate-modulated graphene/Ge Schottky junction base infrared (IR) detector is comparable to a commercially available IR photodetector, but the fabrication process is much simpler and compatible with glass or flexible substrates.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据