期刊
PHYSICAL REVIEW APPLIED
卷 11, 期 2, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.11.024048
关键词
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资金
- DOE Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [de-sc0010526]
- Hong Kong Research Grants Council [ECS26302118]
- Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) [PA 1812/2-1]
- David and Lucile Packard Foundation
Ferroelectric materals are an important platform for the realization of nonvolatile memories. So far, existing ferroelectric memory devices have utilized out-of-plane polarization in ferroelectric thin films. In this paper, we propose a type of random-access memory (RAM) based on ferroelectric thin films with in-plane polarization, called an in-plane ferroelectric tunnel junction. Apart from nonvolatility, lower power usage, and a faster writing operation compared with traditional dynamic RAMs, our proposal has the advantage of a faster reading operation and a nondestructive reading process, thus overcoming the write-after-read problem that exists widely in current ferroelectric RAMs. The recent discovered room-temperature ferroelectric IV-VI semiconductor thin films are a promising material platform for the realization of our proposal.
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