期刊
NANOMATERIALS
卷 9, 期 3, 页码 -出版社
MDPI
DOI: 10.3390/nano9030365
关键词
GaN-based UV LED; wet chemical etching; prism-structured sidewall; crystal orientation; light extraction
类别
资金
- National Natural Science Foundation of China [51675386, U1501241, 51775387]
- National Key Research and Development Program of China [2017YFB1104900]
- Natural Science Foundation of Hubei Province [2018CFA091]
We demonstrated that the tetramethylammonium hydroxide (TMAH) solution possesses different etching abilities to the chip sidewalls with different orientations because the orientation of chip sidewall determines the exposed crystallographic plane of gallium nitride (GaN) and these crystallographic planes are with different chemical stability to the TMAH solution. After TMAH etching treatment, trigonal prisms were observed on sidewalls where m-plane GaN was exposed. For the investigated two types of light-emitting diodes (LEDs) with orthogonal arrangements, the LEDs with their larger sidewalls orientated along the [11-20] direction exhibited an additional 10% improvement in light output power after TMAH etching treatment compared to the LEDs with larger sidewalls orientated along the [1-100] direction.
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