期刊
NANOMATERIALS
卷 9, 期 3, 页码 -出版社
MDPI
DOI: 10.3390/nano9030403
关键词
Ga2O3; transparent conductive electrode; UV LEDs; transmittance; sheet resistance
类别
资金
- Science and Technologies plan Projects of Guangdong Province [2017B010112003, 2017A050506013]
- Applied Technologies Research and Development Projects of Guangdong Province [2015B010127013, 2016B010123004]
- Science and Technologies plan Projects of Guangzhou City [201504291502518, 201604046021, 201704030139]
- Science and Technology Development Special Fund Projects of Zhongshan City [2017F2FC0002, 2017A1009]
We fabricated an indium tin oxide (ITO)/Ga2O3/Ag/Ga2O3 multilayer as a transparent conductive electrode for ultraviolet light-emitting diodes (UV LEDs). The electrical and optical properties of the multilayer were improved by optimizing the annealing temperature of the ITO contact layer and the whole ITO/Ga2O3/Ag/Ga2O3 multilayer, and the thickness of the ITO contact layer and Ag metal layer. After optimization, the sheet resistance and transmittance of the ITO/Ga2O3/Ag/Ga2O3 multilayer was 3.43 omega/sq and 86.4% at 335 nm, respectively. The ITO/Ga2O3/Ag/Ga2O3 multilayer also exhibited a good ohmic contact characteristic with a specific contact resistance of 1.45x10(-3) omega center dot cm(2). These results show that the proposed ITO/Ga2O3/Ag/Ga2O3 multilayer is a promising alternative as a p-type electrode for UV LEDs.
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