期刊
NANOMATERIALS
卷 9, 期 2, 页码 -出版社
MDPI
DOI: 10.3390/nano9020240
关键词
tin oxide; quantum dot; aqueous solution; semiconductor; gas sensor
类别
资金
- National Natural Science Foundation of China [11704055]
- Liaoning Natural Science Foundation [20180510021]
- Dalian High-Level Talents Innovation Supporting Program [2017RQ073]
- Fundamental Research Funds for the Central Universities [3132018188, 3132016320, 3132016347]
Tin oxide quantum dots (QDs) were prepared in aqueous solution from the precursor of tin dichloride via a simple process of hydrolysis and oxidation. The average grain size of QDs was 1.9 nm. The hydrothermal treatment was used to control the average grain size, which increased to 2.7 and 4.0 nm when the operating temperatures of 125 and 225 degrees C were employed, respectively. The X-ray photoelectron spectroscopy (XPS) spectrum and X-ray diffraction analysis (XRD) pattern confirmed a rutile SnO2 system for the QDs. A band gap of 3.66 eV was evaluated from the UV-VIS absorption spectrum. A fluorescence emission peak was observed at a wavelength of 300 nm, and the response was quenched by the high concentration of QDs in the aqueous solution. The current-voltage (I-V) correlation inferred that grain boundaries had the electrical characteristics of the Schottky barrier. The response of the QD thin film to H-2 gas revealed its potential application in semiconductor gas sensors.
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