期刊
NANOMATERIALS
卷 9, 期 2, 页码 -出版社
MDPI
DOI: 10.3390/nano9020178
关键词
CdTe microdots; Schottky barrier; photodetector; piezo-phototronic effect
类别
资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2016R1A6A1A03012877, 2016R1D1A1B03935948, 2018R1D1A1B07051461, 2018R1D1A1B07051474, 2018R1D1A1B07051406, 2018R1D1A1B07050237]
- National Research Foundation of Korea [2018R1D1A1B07051406, 2016R1D1A1B03935948] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
In this paper, a photodetector based on arrayed CdTe microdots was fabricated on Bi coated transparent conducting indium tin oxide (ITO)/glass substrates. Current-voltage characteristics of these photodetectors revealed an ultrahigh sensitivity under stress (in the form of force through press) while compared to normal condition. The devices exhibited excellent photosensing properties with photoinduced current increasing from 20 to 76 mu A cm(-2) under stress. Furthermore, the photoresponsivity of the devices also increased under stress from 3.2 x 10(-4) A/W to 5.5 x 10(-3) A/W at a bias of 5 V. The observed characteristics are attributed to the piezopotential induced change in Schottky barrier height, which actually results from the piezo-phototronic effect. The obtained results also demonstrate the feasibility in realization of a facile and promising CdTe microdots-based photodetector via piezo-phototronic effect.
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