4.5 Article

Terahertz Imaging and Sensing Applications With Silicon-Based Technologies

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TTHZ.2018.2884852

关键词

CMOS; computed tomography (CT); compressed sensing; FMCW radar; multicolor imaging; near-field imaging; silicon technology; SiGe BiCMOS; terahertz (THz); THz imaging

资金

  1. German Research Foundation
  2. program ESSENCE [SPP 1857]
  3. program CoSIP [SPP 1798]
  4. SFB/Transregio 196 MARIE Project C04/C08

向作者/读者索取更多资源

Traditional terahertz (THz) equipment faces major obstacles in providing the system cost and compactness necessary for widespread deployment of THz applications. Because of this, the field of THz integrated circuit (THz IC) design in CMOS and SiGe HBT technologies has surged in the last decade. An interplay of advances in silicon process technology, design technique, and microelectronic packaging promises to narrow the gap between the requirements and the reality of system cost and performance of THz components. Furthermore, the scalability, reconfigurability, and signal processing features of silicon technology have initiated research in complex THz ICs that expand the functionality of THz systems; this has enabled new applications, methods, and algorithms. This paper reviews the progress in THz IC research and investigates several realizations of THz imaging and sensing applications with silicon-based components regarding their motivation, system performance, and challenges. THz computed tomography, broadband multicolor imaging, high-resolution FMCW radar imaging, subwavelength resolution near-field imaging, and compressed sensing are presented.

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