期刊
ADVANCED OPTICAL MATERIALS
卷 7, 期 10, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201801763
关键词
deep ultraviolet; high output power; MOCVD; GaN; AlN multiple quantum wells; ultrathin quantum wells; UVC light sources
资金
- National Key Research and Development Program of China [2016YFB0400802]
- Science Challenge Project [TZ2016003-2]
- NSAF [U1630109]
- National Natural Science Foundation of China [61734001, 61521004, 61704003, 61774004, 91750203]
- Program for Building Regional Innovation Ecosystems of MEXT
- JST SICORP
- MOST in China
- JSPS KAKENHI [JP16H06415]
- RFBR-BRICS (Joint Project) [17-52-80089]
High-output-power electron-beam (e-beam) pumped deep ultraviolet (DUV) light sources, operating at 230-270 nm, are achieved by adjusting the well thickness of binary ultrathin GaN/AlN multiple quantum wells. These structures are fabricated on high-quality thermally annealed AlN templates by metal-organic chemical vapor deposition. Owing to the reduced dislocation density, large electron-hole overlap, and efficient carrier injection by e-beam, the DUV light sources demonstrate high output powers of 24.8, 122.5, and 178.8 mW at central wavelengths of 232, 244, and 267 nm, respectively. Further growth optimization and employing an e-gun with increased beam current lead to a record output power of approximate to 2.2 W at emission wavelength of approximate to 260 nm, the key wavelength for water sterilization. This work manifests the practical levels of high-output-power DUV light sources operated by using e-beam pumping method.
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