期刊
MATERIALS
卷 12, 期 5, 页码 -出版社
MDPI
DOI: 10.3390/ma12050689
关键词
GaN; ion implantation; Mg; MOSFET; Si
类别
资金
- MEXT Program for research and development of next generation semiconductor to realize energy-saving society
A normally-off GaN double-implanted vertical MOSFET (DMOSFET) with an atomic layer deposition (ALD)-Al2O3 gate dielectric film on a free-standing GaN substrate fabricated by triple ion implantation is presented. The DMOSFET was formed with Si ion implanted source regions in a Mg ion implanted p-type base with N ion implanted termination regions. A maximum drain current of 115 mA/mm, maximum transconductance of 19 mS/mm at a drain voltage of 15 V, and a threshold voltage of 3.6 V were obtained for the fabricated DMOSFET with a gate length of 0.4 m with an estimated p-type base Mg surface concentration of 5 x 10(18) cm(-3). The difference between calculated and measured V(th)s could be due to the activation ratio of ion-implanted Mg as well as Fermi level pinning and the interface state density. On-resistance of 9.3 mcm(2) estimated from the linear region was also attained. Blocking voltage at off-state was 213 V. The fully ion implanted GaN DMOSFET is a promising candidate for future high-voltage and high-power applications.
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