期刊
NATURE COMMUNICATIONS
卷 10, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41467-019-09137-6
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资金
- Hans-Heinrich Braun
- Swiss National Science Foundation [IZLRZ2_164051]
- TERA Gruppo V project of INFN
- Swiss National Science Foundation (SNF) [IZLRZ2_164051] Funding Source: Swiss National Science Foundation (SNF)
The complex interplay among electronic, magnetic and lattice degrees of freedom in Mott-Hubbard materials leads to different types of insulator-to-metal transitions (IMT) which can be triggered by temperature, pressure, light irradiation and electric field. However, several questions remain open concerning the quantum or thermal nature of electric field-driven transition process. Here, using intense terahertz pulses, we reveal the emergence of an instantaneous purely-electronic IMT in the Mott-Hubbard vanadium sequioxide (V2O3) prototype material. While fast electronics allow thermal-driven transition involving Joule heating, which takes place after tens of picoseconds, terahertz electric field is able to induce a sub-picosecond electronic switching. We provide a comprehensive study of the THz induced Mott transition, showing a crossover from a fast quantum dynamics to a slower thermal dissipative evolution for increasing temperature. Strong-field terahertz-driven electronic transition paves the way to ultrafast electronic switches and high-harmonic generation in correlated systems.
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