4.8 Article

Alcohol-Mediated Resistance-Switching Behavior in Metal-Organic Framework-Based Electronic Devices

期刊

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
卷 55, 期 31, 页码 8884-8888

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.201602499

关键词

chemically mediated memory; flexible devices; metal-organic frameworks; resistance switching; supramolecular chemistry

资金

  1. Singapore Ministry of Education [ARC26/15]
  2. NTU-A*STAR Silicon Technologies Centre of Excellence [11235100003]
  3. National Natural Science Foundation of China (NSFC) [21428304]

向作者/读者索取更多资源

Metal-organic frameworks (MOFs) have drawn increasing attentions as promising candidates for functional devices. Herein, we present MOF films in constructing memory devices with alcohol mediated resistance switching property, where the resistance state is controlled by applying alcohol vapors to achieve multilevel information storage. The ordered packing mode and the hydrogen bonding system of the guest molecules adsorbed in MOF crystals are shown to be the reason for the alcohol mediated electrical switching. This chemically mediated memory device can be a candidate in achieving environment-responsive devices and exhibits potential applications in wearable information storage systems.

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