Ultrathin monolithic HfO2 formed by Hf-seeded atomic layer deposition on MoS2: Film characteristics and its transistor application

For the fabrication of high-performance top-gated MoS2 transistors, a uniform atomic layer deposition (ALD) of an ultrathin high-k gate dielectric film without abnormal leakage paths on a MoS2 channel is required. In this study, we fabricated a similar to 5.2 nm-thick monolithic HfO2 gate dielectric film by utilizing an e-beam-evaporated Hf seed layer (target thickness of 3 nm) prior to the ALD of a HfO2 film (similar to 2 nm). The Hf seed layer was fully converted to HfO2 without metallic residues during the following ALD process, without damages to the Raman and photoluminescence characteristics of the underlying MoS2. The conformal and pinhole-free ALD of the subsequent HfO2 film was verified using conductive atomic force microscopy. In addition, operation of a topgated MoS2 transistor was demonstrated by integrating the Hf-seeded HfO2 gate dielectric film.