4.8 Article Proceedings Paper

Resistive Switching Behavior in Ferroelectric Heterostructures

期刊

SMALL
卷 15, 期 32, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201805088

关键词

conductivity; ferroelectric heterostructures; ferroelectricity; resistive switching

资金

  1. basic research and common key technology innovation projects of Shenyang National Laboratory for Materials Science [2017RP15]
  2. key research and development plan of Liaoning Province [2017104002]
  3. basic scientific research projects of colleges and universities of Liaoning Province [LZGD2017005]
  4. major project of industrial technology research institute of Liaoning colleges and universities [201824010]

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Resistive random-access memory (RRAM) is a promising candidate for next-generation nonvolatile random-access memory protocols. The information storage in RRAM is realized by the resistive switching (RS) effect. The RS behavior of ferroelectric heterostructures is mainly controlled by polarization-dominated and defect-dominated mechanisms. Under certain conditions, these two mechanisms can have synergistic effects on RS behavior. Therefore, RS performance can be effectively improved by optimizing ferroelectricity, conductivity, and interfacial structures. Many methods have been studied to improve the RS performance of ferroelectric heterostructures. Typical approaches include doping elements into the ferroelectric layer, controlling the oxygen vacancy concentration and optimizing the thickness of the ferroelectric layer, and constructing an insertion layer at the interface. Here, the mechanism of RS behavior in ferroelectric heterostructures is briefly introduced, and the methods used to improve RS performance in recent years are summarized. Finally, existing problems in this field are identified, and future development trends are highlighted.

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