期刊
SENSORS AND ACTUATORS B-CHEMICAL
卷 283, 期 -, 页码 373-383出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2018.12.042
关键词
Porous silicon; Sputtering; SiC thin film; Hydrogen sensor
资金
- Ministry of Human Resource and Development (MHRD), Government of India [MHR02-41-126-429]
Present work demonstrates the hydrogen gas (H-2) sensing characteristics of palladium-platinum (Pd-Pt) functionalized silicon carbide (SiC) thin film grown on porous silicon (PSi) substrate for high temperature applications. Nano-crystalline SiC thin film was deposited by RF magnetron sputtering on anodized PSi substrate. The loading of discrete ultra-thin Pd-Pt bimetallic catalytic layer was carefully controlled by varying the sputtering parameters. The proposed device architecture (Pd-Pt/SiC/PSi) revealed significant advantages, such as stable high sensing response, large tunable detection range (5-500 ppm), fast response/recovery time, excellent reproducibility, high selectivity, wide operating temperature regime (25-500 degrees C) and good durability. The observed high response may be ascribed to the combined effect of enhanced catalytic activity of bimetallic Pd-Pt layer and increased surface area of the proposed sensor.
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