期刊
SENSORS AND ACTUATORS B-CHEMICAL
卷 282, 期 -, 页码 756-764出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2018.11.075
关键词
Hydrogen sulfide; Gas sensor; Tellurium; Room temperature
资金
- Nano.Material Technology Development Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT, and Future Planning [2016M3A7B4900044]
- Human Resources Development program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Korean government Ministry of Trade, Industry, and Energy [20174030201830]
In this study, we present the synthesis of rice-like tellurium (Te) thin films using a galvanic displacement reaction (GDR, a substrate.sacrificial, electro-less deposition technique) on a silicon wafer and their response to hydrogen sulfide (H2S) gas at room temperature. The thin films were composed of rice-like Te nano grains, whose thickness and crystallinity were controlled by adjusting the reaction time of the GDR. As the reaction time increased, the as-fabricated rice-like Te-based gas sensors showed full response and recovery. The sensors with an optimized GDR showed ultra-high sensing response to H2S (1000% at 100 ppm of H2S) under ambient sensing conditions, with excellent response toward H2S gas (ranging from 15 ppb to 90 ppm). Additionally, the optimized sensor shows relatively high response toward H2S gas as compared to other gases such as NO2, NH3, and CO. Together, these results indicate that the rice-like tellurium (Te) thin films have great potential for applications in high-performance (HS)-S-2 gas sensors that are capable of operating at room temperature.
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