期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 34, 期 6, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/ab1222
关键词
hot carrier; photovoltaic; solar cell; metal absorption
类别
资金
- Royal Commission for the Exhibition of 1851 Industrial Fellowship
Hot carrier solar cells overcome the fundamental limitations of conventional devices where charge carriers are photogenerated over a broad energy spectrum but rapidly lose energy to the lattice and are extracted at the lowest energy of the system. In a hot carrier photovoltaic cell, carriers are extracted at higher energies than the absorption threshold, and extraction proceeds sufficiently quickly to avoid dissipative energy loss. We demonstrate a new hot carrier photovoltaic device where a broad spectrum of light is absorbed in metallic layers tens of nanometers thick. Using a semiconductor quantum well resonant tunnel structure we demonstrate energy selective hot carrier extraction from the metal film and show a unique hot carrier signature in the device IV characteristics. Using a multiple beam experiment, we further prove that these carriers arise from a hot electron population rather than via internal photoemission; a necessary requirement for high efficiency photovoltaic operation.
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