期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 34, 期 3, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/ab0331
关键词
InSb; III-V; HCl; ALD; Al2O3; MOSCAP
类别
资金
- EPSRC Engineering Fellowships for Growth: Narrow Band-gap Semiconductors for Integrated Sensing and Communications [EP/M002411/1]
- EPSRC [EP/M002411/1] Funding Source: UKRI
In this work, the role of HCl treatments on InSb surfaces and InSb-Al2O3 dielectric interfaces is characterised. X-ray photoelectron spectroscopy measurements indicate that HCl diluted in and rinsed with isopropanol (IPA) results in a surface layer of InCl3 which is not present for similar HCl-water processes. Furthermore, this InCl3 layer desorbs from the surface between 200 degrees C and 250 degrees C. Metal-oxide-semiconductor capacitors were fabricated using atomic layer deposition of Al2O3 at 200 degrees C and 250 degrees C and the presence of InCl3 was associated with a +0.79 V flatband voltage shift. The desorption of the InCl3 layer at 250 degrees C reversed this shift but the increased process temperature resulted in increased interface-trapped charge (D-it) and hysteresis voltage (V-H). This shift in flatband voltage, which does not affect other figures of merit, offers a promising route to manipulate the threshold voltage of MOS transistors, allowing enhancement-mode and depletion-mode devices to be fabricated in parallel.
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