相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays
Davide Resnati et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Error Characterization, Mitigation, and Recovery in Flash-Memory-Based Solid-State Drives
Yu Cai et al.
PROCEEDINGS OF THE IEEE (2017)
Modeling of Threshold Voltage Distribution in NAND Flash Memory: A Monte Carlo Method
Haibo Li
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
LSB page refresh based retention error recovery scheme for MLC NAND Flash
Haozhi Ma et al.
SCIENCE CHINA-INFORMATION SCIENCES (2016)
A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory
Zhiyuan Lun et al.
SCIENCE CHINA-INFORMATION SCIENCES (2016)
Fitting Cells Into a Narrow VT Interval: Physical Constraints Along the Lifetime of an Extremely Scaled NAND Flash Memory Array
Giovanni Maria Paolucci et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Slicing-response model for ablation mass removal of polyformaldehyde irradiated by pulsed CO2 laser in vacuum
Li Gan et al.
SCIENCE CHINA-TECHNOLOGICAL SCIENCES (2015)
Using Lifetime-Aware Progressive Programming to Improve SLC NAND Flash Memory Write Endurance
Guiqiang Dong et al.
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS (2014)
Total ionizing radiation effects of 2-T SONOS for 130 nm/4 Mb NOR flash memory technology
Qiao FengYing et al.
SCIENCE CHINA-INFORMATION SCIENCES (2014)
Estimating Information-Theoretical NAND Flash Memory Storage Capacity and its Implication to Memory System Design Space Exploration
Guiqiang Dong et al.
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS (2012)
Compact Modeling of Variability Effects in Nanoscale NAND Flash Memories
Alessio Spessot et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
Random Telegraph Noise Effect on the Programmed Threshold-Voltage Distribution of Flash Memories
Christian Monzio Compagnoni et al.
IEEE ELECTRON DEVICE LETTERS (2009)
A 70 nm 16 Gb 16-level-cell NAND flash memory
Noboru Shibata et al.
IEEE JOURNAL OF SOLID-STATE CIRCUITS (2008)
Analytical Model for the Electron-Injection Statistics During Programming of Nanoscale NAND Flash Memories
Christian Monzio Compagnoni et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)
Ultimate Accuracy for the NAND Flash Program Algorithm Due to the Electron Injection Statistics
Christian Monzio Compagnoni et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)
Impact of floating gate dry etching on erase characteristics in NOR flash memory
WH Lee et al.
IEEE ELECTRON DEVICE LETTERS (2002)