期刊
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
卷 116, 期 11, 页码 4843-4848出版社
NATL ACAD SCIENCES
DOI: 10.1073/pnas.1820756116
关键词
source-gated transistor; oxide semiconductors; Schottky barrier; inhomogeneities; intrinsic gain
资金
- North-West Nanoscience Doctoral Training Center
- Engineering and Physical Sciences Research Council (EPSRC) [EP/N021258/1, EP/G03737X/1]
- National Key Research and Development Program of China [2016YFA0301200, 2016YFA0201800]
- National Natural Science Foundation of China [11374185, 11304180]
- EPSRC [EP/K005014/1, EP/N021258/1] Funding Source: UKRI
Despite being a fundamental electronic component for over 70 years, it is still possible to develop different transistor designs, including the addition of a diode-like Schottky source electrode to thin-film transistors. The discovery of a dependence of the source barrier height on the semiconductor thickness and derivation of an analytical theory allow us to propose a design rule to achieve extremely high voltage gain, one of the most important figures of merit for a transistor. Using an oxide semiconductor, an intrinsic gain of 29,000 was obtained, which is orders of magnitude higher than a conventional Si transistor. These same devices demonstrate almost total immunity to negative bias illumination temperature stress, the foremost bottleneck to using oxide semiconductors in major applications, such as display drivers. Furthermore, devices fabricated with channel lengths down to 360 nm display no obvious short-channel effects, another critical factor for high-density integrated circuits and display applications. Finally, although the channel material of conventional transistors must be a semiconductor, by demonstrating a high-performance transistor with a semimetal-like indium tin oxide channel, the range and versatility of materials have been significantly broadened.
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