4.5 Article

Development an identification method of friction coefficient between wafer and carrier in double-sided lapping

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ELSEVIER SCIENCE INC
DOI: 10.1016/j.precisioneng.2019.01.005

关键词

Double-sided lapping; Double-sided polishing; Wafer behavior; Friction coefficient between wafer and carrier; Wafer; Carrier

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Behavior of a wafer is one of the most significant concerns in double-sided lapping since it depends on the distribution of material removal rate. Though the wafer behavior is affected by the friction coefficient between the wafer and a carrier, the coefficient has hardly been discussed. In this study, an identification method of the friction coefficient based on variation of wafer rotational speed with wafer position in the carrier during single-sided lapping operation on double-sided lapping machine is developed for accurate estimation of the wafer behavior. The friction coefficient is identified by comparing experimental and theoretical variation of the rotational speed of the wafer. The experiment is carried out under the condition where lubrication condition between the wafer and the carrier is similar to that in double-sided lapping, and the variation is measured by image processing of the wafer behavior. The theoretical variation is calculated based on the equilibrium of force and moment applied to the wafer. It is confirmed that the theoretical rotational speed of the wafer under a friction coefficient condition agrees well with the measured one in terms of not only the highest and the lowest speed but also the variation with the wafer position in the carrier. Thus, it is assumed that the practical coefficient is identified by utilizing this method. In addition, the behavior of the wafer in double-sided lapping is calculated using the identified friction coefficient, and it is suggested that precise consideration of the contact status between the wafer and the carrier, i.e., non-slip, slip, and non-contact is essential for practical estimation.

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