期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 216, 期 7, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201800814
关键词
aluminum-doped zinc oxide; magnetron sputtering; thin film; transparent conductive oxides
资金
- CENTEM project [CZ.1.05/2.1.00/03.0088]
- ERDF, Ministry of Education, Youth and Sports OP RDI programme
- Ministry of Education, Youth and Sports [LO1402]
Aluminum-doped zinc oxide (AZO) is a suitable material for use as transparent electrode. Due to its lower price it is applied in the production of silicon solar cells. However, it is difficult to obtain suitable electrical properties at low deposition temperatures. Moreover, the AZO films with low thickness exhibit significantly higher average resistivity, which limits their usability, especially if they are prepared on flexible substrates. A lot of effort is invested to replace indium tin oxide (ITO) to a much greater extent now, since Indium is rare and its price is rising, thus the preparation of low-thickness AZO films at low temperature is also subject of intense research. The presented paper summarizes the reported results, discusses the causes of the differences between ITO and AZO films, and suggests the direction of research and the potential solution that should lead to increased usability of AZO films and also possible replacement of ITO films.
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