期刊
PHASE TRANSITIONS
卷 92, 期 5, 页码 451-460出版社
TAYLOR & FRANCIS LTD
DOI: 10.1080/01411594.2019.1583339
关键词
Electronic band structure; partial density of states; optical parameters; substitutional impurities; first-principles calculation
资金
- National Science Centre, Poland [2016/21/N/ST3/00461]
In this paper, an investigation of the electronic and optical properties of the TlGaSe2 pure layered crystal and TlGaSe2 doped with substitutional impurities in the framework of the density functional theory have been carried out. Based on the calculations of the band structure, energy dependencies for the optical characteristics such as the real and imaginary parts of the dielectric function, the refractive index, and the absorption coefficient were obtained for TlGa1-chi In chi Se2, TlGa(Se1-chi S chi)(2) compounds. The effect of the impurities on the band gap and optical parameters have been analyzed.
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