期刊
OPTICS COMMUNICATIONS
卷 434, 期 -, 页码 49-53出版社
ELSEVIER
DOI: 10.1016/j.optcom.2018.10.028
关键词
Optical modulator; Silicon photonics; Slot waveguide
类别
资金
- Defense Research and Development Organization (DRDO), Government of India [ERIP/ER/1303134/M/01/1616]
- Science AMP
- Engineering Research Board (SERB), Government of India [YSS/2014/0000089]
A high-speed electro-optic modulator based on CMOS compatible silicon waveguide is proposed. The optical waveguide in silicon is formed by creating a slot in a rib structure that results in a strong optical confinement with an acceptably low propagation loss. The proposed design of slotted-rib waveguide with a traveling-wave electrode facilitates an efficient optical modulation in silicon. Taking the advantage of velocity matched between optical and microwave modes, a high-speed operation up to 70 Gbps with an extinction ratio of approximate to 4.9 dB is reported at a peak to peak voltage of 3 V-pp under a reverse bias of 4 V. An insertion loss of 3.1 dB is obtained for a 4 mm long device.
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