相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
Norman Susilo et al.
APPLIED PHYSICS LETTERS (2018)
226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection
Dong Liu et al.
APPLIED PHYSICS LETTERS (2018)
High hole concentration in Mg-doped AlN/AlGaN superlattices with high Al content
Kazuaki Ebata et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2018)
Degradation effects of the active region in UV-C light-emitting diodes
Johannes Glaab et al.
JOURNAL OF APPLIED PHYSICS (2018)
Effects of quantum barriers and electron-blocking layer in deep-ultraviolet light-emitting diodes
Jih-Yuan Chang et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2018)
Internal strain induced significant enhancement of deep ultraviolet light extraction efficiency for AlGaN multiple quantum wells grown by MOCVD
Hanling Long et al.
OPTICS EXPRESS (2018)
A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire
Yosuke Nagasawa et al.
APPLIED SCIENCES-BASEL (2018)
High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer
Yukio Kashima et al.
APPLIED PHYSICS EXPRESS (2018)
Localized Surface Plasmon-Enhanced Deep-UV Light-Emitting Diodes with Al/Al2O3 Asymmetrical Nanoparticles
Jin Wang et al.
PLASMONICS (2017)
Investigation on Thermal Characterization of Eutectic Flip-Chip UV-LEDs With Different Bonding Voidage
Renli Liang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output
Michiko Kaneda et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2017)
Investigation of the light-extraction efficiency in 280nm AlGaN-based light-emitting diodes having a highly transparent p-AlGaN layer
Joosun Yun et al.
JOURNAL OF APPLIED PHYSICS (2017)
Self-assembled indium tin oxide nanoball-embedded omnidirectional reflectors for high photon extraction efficiency in III-nitride ultraviolet emitters
Semi Oh et al.
NANOSCALE (2017)
High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes
Chia-Yen Huang et al.
AIP ADVANCES (2017)
Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes
Kai Ding et al.
CRYSTALS (2017)
Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates
Donghyun Lee et al.
APPLIED PHYSICS LETTERS (2017)
150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265nm
Shin-ichiro Inoue et al.
APPLIED PHYSICS LETTERS (2017)
Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
Takayoshi Takano et al.
APPLIED PHYSICS EXPRESS (2017)
Annealing of an AlN buffer layer in N2-CO for growth of a high-quality AlN film on sapphire
Hideto Miyake et al.
APPLIED PHYSICS EXPRESS (2016)
Controlling a three dimensional electron slab of graded AlxGa1-xN
R. Adhikari et al.
APPLIED PHYSICS LETTERS (2016)
Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices
C. Hartmann et al.
CRYSTENGCOMM (2016)
Vertically conducting deep-ultraviolet light-emitting diodes with interband tunneling junction grown on 6H-SiC substrate
Hongwei Liang et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
Christoph Reich et al.
APPLIED PHYSICS LETTERS (2015)
Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N
Gunnar Kusch et al.
APPLIED PHYSICS LETTERS (2015)
High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
Zachary Bryan et al.
APPLIED PHYSICS LETTERS (2015)
Interband tunneling for hole injection in III-nitride ultraviolet emitters
Yuewei Zhang et al.
APPLIED PHYSICS LETTERS (2015)
Thermal Analysis of Eutectic Flip-Chip Light-Emitting Diodes Fabricated Using Copper-Coated Ceramic Substrate
Chien-Ping Wang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Growth and characterization of high quality AlN using combined structure of low temperature buffer and superlattices for applications in the deep ultraviolet
Jinwan Kim et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2015)
AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AIN template using MOVPE
Jianchang Yan et al.
JOURNAL OF CRYSTAL GROWTH (2015)
Crack-free Si-doped n-AlGaN film grown on sapphire substrate with high-temperature AN interlayer
Shuchang Wang et al.
OPTIK (2015)
Stable and metastable Si negative-U centers in AlGaN and AlN
Xuan Thang Trinh et al.
APPLIED PHYSICS LETTERS (2014)
Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes
J. J. Wierer et al.
APPLIED PHYSICS LETTERS (2014)
Efficient charge carrier injection into sub-250nm AlGaN multiple quantum well light emitting diodes
Frank Mehnke et al.
APPLIED PHYSICS LETTERS (2014)
Hybrid functional calculations of DX centers in AlN and GaN
L. Gordon et al.
PHYSICAL REVIEW B (2014)
Bulk AlN growth by physical vapour transport
C. Hartmann et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2014)
High-output-power 255/280/310 nm deep ultraviolet light-emitting diodes and their lifetime characteristics
A. Fujioka et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2014)
Performance enhancement of GaN-based flip-chip ultraviolet light-emitting diodes with a RPD AlN nucleation layer on patterned sapphire substrate
B. C. Lin et al.
OPTICAL MATERIALS EXPRESS (2014)
270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power
James R. Grandusky et al.
APPLIED PHYSICS EXPRESS (2013)
Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy
Toru Kinoshita et al.
APPLIED PHYSICS EXPRESS (2013)
Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes
Han-Youl Ryu et al.
APPLIED PHYSICS EXPRESS (2013)
High p-type conduction in high-Al content Mg-doped AlGaN
Toru Kinoshita et al.
APPLIED PHYSICS LETTERS (2013)
Ge doped GaN with controllable high carrier concentration for plasmonic applications
Ronny Kirste et al.
APPLIED PHYSICS LETTERS (2013)
Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%
Frank Mehnke et al.
APPLIED PHYSICS LETTERS (2013)
Effective Thermal Management in Ultraviolet Light-Emitting Diodes With Micro-LED Arrays
N. Lobo Ploch et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
Tetsuhiko Inazu et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Combination of Indium-Tin Oxide and SiO2/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes
Tsubasa Nakashima et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
Yuka Kuwano et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1-xN for improved performance of deep ultraviolet light emitting diodes
T. M. Al Tahtamouni et al.
JOURNAL OF APPLIED PHYSICS (2013)
Identification of a tri-carbon defect and its relation to the ultraviolet absorption in aluminum nitride
K. Irmscher et al.
JOURNAL OF APPLIED PHYSICS (2013)
Optical gas sensing: a review
Jane Hodgkinson et al.
MEASUREMENT SCIENCE AND TECHNOLOGY (2013)
Enhancement of light extraction efficiency in sub-300 nm nitride thin-film flip-chip light-emitting diodes
M. Lachab et al.
SOLID-STATE ELECTRONICS (2013)
Realization of high-efficiency deep-UV LEDs using transparent p-AlGaN contact layer
Noritoshi Maeda et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 (2013)
AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
Max Shatalov et al.
APPLIED PHYSICS EXPRESS (2012)
Internal quantum efficiency in AlGaN with strong carrier localization
J. Mickevicius et al.
APPLIED PHYSICS LETTERS (2012)
Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells
Hideaki Murotani et al.
APPLIED PHYSICS LETTERS (2012)
AIN homoepitaxial growth on sublimation-AIN substrate by low-pressure HVPE
Takuya Nomura et al.
JOURNAL OF CRYSTAL GROWTH (2012)
Mg-hydrogen interaction in AlGaN alloys
M. E. Zvanut et al.
GALLIUM NITRIDE MATERIALS AND DEVICES VII (2012)
Laser lift-off of AlN/sapphire for UV light-emitting diodes
Hiroki Aoshima et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 (2012)
Novel Solution Growth Method of Bulk AlN Using Al and Li3N Solid Sources
Yoshihiro Kangawa et al.
APPLIED PHYSICS EXPRESS (2011)
Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
Kazuhito Ban et al.
APPLIED PHYSICS EXPRESS (2011)
High Output Power from 260nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance
James R. Grandusky et al.
APPLIED PHYSICS EXPRESS (2011)
Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material
R. Dahal et al.
APPLIED PHYSICS LETTERS (2011)
High hole carrier concentration realized by alternative co-doping technique in metal organic chemical vapor deposition
Yoshinobu Aoyagi et al.
APPLIED PHYSICS LETTERS (2011)
Characterization of dislocation arrays in AlN single crystals grown by PVT
Rafael Dalmau et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2011)
Advances in group III-nitride-based deep UV light-emitting diode technology
M. Kneissl et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2011)
Application of GaN-based ultraviolet-C light emitting diodes - UV LEDs - for water disinfection
M. A. Wuertele et al.
WATER RESEARCH (2011)
(Al,Ga)N overgrowth over AlN ridges oriented in [11(2)under-bar0] and [1(1)under-bar00] direction
V. Kueller et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 (2011)
Improved performance of UV-LED by p-AlGaN with graded composition
Jianchang Yan et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2 (2011)
Improved Efficiency of 255-280 nm AlGaN-Based Light-Emitting Diodes
Cyril Pernot et al.
APPLIED PHYSICS EXPRESS (2010)
Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
Hideki Hirayama et al.
APPLIED PHYSICS EXPRESS (2010)
Analysis of the physical processes responsible for the degradation of deep-ultraviolet light emitting diodes
Matteo Meneghini et al.
APPLIED PHYSICS LETTERS (2010)
Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector
N. Lobo et al.
APPLIED PHYSICS LETTERS (2010)
Growth and characterization of Mg-doped AlGaN-AlN short-period superlattices for deep-UV optoelectronic devices
A. A. Allerman et al.
JOURNAL OF CRYSTAL GROWTH (2010)
White light emitting diodes with super-high luminous efficacy
Yukio Narukawa et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2010)
Photoluminescence dynamics of AlGaN quantum wells with built-in electric fields and localized states
J. Mickevicius et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2010)
Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures
John Simon et al.
SCIENCE (2010)
Characterization of nanometer scale compositionally inhomogeneous AlGaN active regions on bulk AlN substrates
A. V. Sampath et al.
SOLID-STATE ELECTRONICS (2010)
Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region
Vinod Adivarahan et al.
APPLIED PHYSICS EXPRESS (2009)
High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer
Hirotoshi Tsuzuki et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2009)
222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
Hideki Hirayama et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2009)
Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes
R. Jain et al.
APPLIED PHYSICS LETTERS (2008)
Large-area AlN substrates for electronic applications: An industrial perspective
Robert T. Bondokov et al.
JOURNAL OF CRYSTAL GROWTH (2008)
Effect of the AIN nucleation layer growth on AlN material quality
O. Reentilae et al.
JOURNAL OF CRYSTAL GROWTH (2008)
Ultraviolet light-emitting diodes based on group three nitrides
Asif Khan et al.
NATURE PHOTONICS (2008)
Origin of efficiency droop in GaN-based light-emitting diodes
Min-Ho Kim et al.
APPLIED PHYSICS LETTERS (2007)
Performance of the light emitting diodes versus conventional light sources in the UV light cured formulations
Kelechi C. Anyaogu et al.
JOURNAL OF APPLIED POLYMER SCIENCE (2007)
Status and future of high-power light-emitting diodes for solid-state lighting
Michael R. Krames et al.
JOURNAL OF DISPLAY TECHNOLOGY (2007)
Preparation of a freestanding AlN substrate by hydride vapor phase epitaxy at 1230°C using (111)Si as a starting substrate
Yoshinao Kumagai et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2007)
Vertical injection thin-film AlGaN/AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes
L. Zhou et al.
APPLIED PHYSICS LETTERS (2006)
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
Shigefusa F. Chichibu et al.
NATURE MATERIALS (2006)
High performance thin-film flip-chip InGaN-GaN light-emitting diodes
O. B. Shchekin et al.
APPLIED PHYSICS LETTERS (2006)
Curing of composite components by ultraviolet radiation: A review
A Endruweit et al.
POLYMER COMPOSITES (2006)
Electron mobility in graded AlGaN alloys
S Rajan et al.
APPLIED PHYSICS LETTERS (2006)
AlGaN deep-ultraviolet light-emitting diodes
JP Zhang et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2005)
Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
SR Lee et al.
APPLIED PHYSICS LETTERS (2005)
Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
H Hirayama
JOURNAL OF APPLIED PHYSICS (2005)
Nitride deep-ultraviolet light-emitting diodes with microlens array
M Khizar et al.
APPLIED PHYSICS LETTERS (2005)
Investigation of Mg doping in high-Al content p-type AlxGa1-xN (0.3< x <0.5) -: art. no. 082107
SR Jeon et al.
APPLIED PHYSICS LETTERS (2005)
First-principles calculations for defects and impurities: Applications to III-nitrides
CG Van de Walle et al.
JOURNAL OF APPLIED PHYSICS (2004)
High-power deep ultraviolet light-emitting diodes based on a micro-pixel design
V Adivarahan et al.
APPLIED PHYSICS LETTERS (2004)
High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE
T Kawashima et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Transport properties of highly conductive n-type Al-rich AlxGa1-xN (x≥0.7)
ML Nakarmi et al.
APPLIED PHYSICS LETTERS (2004)
4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes
A Yasan et al.
APPLIED PHYSICS LETTERS (2003)
Mg acceptor level in AlN probed by deep ultraviolet photoluminescence
KB Nam et al.
APPLIED PHYSICS LETTERS (2003)
Microstructure of heteroepitaxial GaN revealed by x-ray diffraction
R Chierchia et al.
JOURNAL OF APPLIED PHYSICS (2003)
Metalorganic chemical vapor deposition of highly conductive Al0.65Ga0.35N films
P Cantu et al.
APPLIED PHYSICS LETTERS (2003)
Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping
ML Nakarmi et al.
APPLIED PHYSICS LETTERS (2003)
Dislocation effect on light emission efficiency in gallium nitride
SY Karpov et al.
APPLIED PHYSICS LETTERS (2002)
High DC power 325 nm emission deep UV LEDs over sapphire
A Chitnis et al.
ELECTRONICS LETTERS (2002)
Intentional control of n-type conduction for Si-doped AlN and AlxGa1-xN (0.42≤x<1)
Y Taniyasu et al.
APPLIED PHYSICS LETTERS (2002)
Submilliwatt operation of AlInGaN based multifinger-design 315 nm light emitting diode (LED) over sapphire substrate
A Chitnis et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS (2002)
Efficient 230-280 nm emission from high-Al-content AlGaN-based multiquantum wells
H Hirayama et al.
APPLIED PHYSICS LETTERS (2002)
Diffusion, release, and uptake of hydrogen in magnesium-doped gallium nitride: Theory and experiment
SM Myers et al.
JOURNAL OF APPLIED PHYSICS (2001)
Characterization of threading dislocations in GaN epitaxial layers
T Hino et al.
APPLIED PHYSICS LETTERS (2000)
分享论文
