期刊
NATURE PHOTONICS
卷 13, 期 4, 页码 233-244出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41566-019-0359-9
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资金
- National Research Foundation of Korea - Ministry of Science and ICT (Global Research Laboratory programme) [NRF-2017K1A1A2013160]
- German Research Foundation (DFG) within the Collaborative Research Centre 'Semiconductor Nanophotonics' [CRC 787]
- Federal Ministry of Education and Research (BMBF) of Germany within the 'Zwanzig20' initiative 'Advanced UV for Life'
By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned to cover almost the entire ultraviolet spectral range (210-400 nm), making ultraviolet light-emitting diodes perfectly suited to applications across a wide number of fields, whether biological, environmental, industrial or medical. However, technical developments notwithstanding, deep-ultraviolet light-emitting diodes still exhibit relatively low external quantum efficiencies because of properties intrinsic to aluminium-rich group III nitride materials. Here, we review recent progress in the development of AlGaN-based deep-ultraviolet light-emitting devices. We also describe the key obstacles to enhancing their efficiency and how to improve their performance in terms of defect density, carrier-injection efficiency, light extraction efficiency and heat dissipation.
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