期刊
NANOTECHNOLOGY
卷 30, 期 24, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/ab0f4d
关键词
cuprous oxide nanowires; metal-semiconductor nanostructures; hot carrier transfer; field-effect phototransistor; photodetector
资金
- National Natural Science Foundation of China [61405077, 51675246]
- Research Foundation for Youth Backbone Teacher Training Program of Jiangsu University (China)
- Fundamental Research Funds for the Central Universities of China [lzujbky-2016-119]
- China Scholarship Council (CSC) [201708320158]
- Research Foundation of Education Bureau of Hubei Province, China [T201617]
In metal-semiconductor hybrid nanostructures, metal absorbs incident photons and generates hot carriers. The hot carriers are injected into the adjacent semiconductor and subsequently contribute to photocurrent. This process increases the conversion efficiency of optoelectronic devices and provides a new path of photodetectors. In this work, we report an enhanced photodetector by hot holes transfer, which is based on Au nanoparticles decorated p-type Cu2O nanowires. The photodetector achieves an enhanced photo-responsivity up to 0.314 A W-1, a higher detectivity of 3.7 x 10(10) Jones. The response time and external quantum efficiency of the Cu2O-Au nanowires photodetector are 3.7 times faster and 18.2 times higher than that of the Cu2O nanowires, respectively. The findings indicate that Cu2O-Au nanowires would be a promising candidate in developing novel plasmonic hot carrier devices.
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