期刊
NANO RESEARCH
卷 12, 期 5, 页码 1139-1145出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-019-2364-1
关键词
van der Waals epitaxy; Sb2Se3; WS2 heterostructures; rectification behavior; photovoltaic effect; photoswitch
类别
资金
- Fundamental Research Funds of the Central Universities [531107051078]
- Double First-Class University Initiative of Hunan University [531109100004]
- National Natural Science Foundation of China [751214296]
- Hunan Key Laboratory of Two-Dimensional Materials [801200005]
- Strategic Priority Research Program of Chinese Academy of Science [XDB30000000]
The mixed-dimensional integration of two-dimensional (2D) materials with non-2D materials can give rise to prominent advances in performance or function. To date, the mixed-dimensional one-dimensional (1D)/2D heterostructures have been fabricated using various physical assembly approaches. However, direct epitaxial growth method which has notable advantages in preparing large-scale products and obtaining perfect interfaces is rarely investigated. Herein, we demonstrate for the first time the direct synthesis of the 1D/2D mixed-dimensional heterostructures by sequential vapor-phase growth of Sb2Se3 nanowires on WS2 monolayers. X-ray diffraction (XRD) pattern and Raman spectrum confirm the composition of the Sb2Se3/WS2 heterostructures. Transmission electron microscope (TEM) measurement demonstrates high quality of the heterostructures. Electrical transport characterization reveals that Sb2Se3 nanowire exhibits p-type characteristic and that WS2 monolayer exhibits n-type behavior, and that the p-n diode from 1D/2D mixed-dimensional Sb2Se3/WS2 heterostructure possesses obvious current rectification behavior. Optoelectronic measurements of the heterostructures show apparent photovoltaic response with an open-circuit voltage of 0.19 V, photoresponsivity of 1.51 A/W (V-ds = 5 V) and fast response time of less than 8 ms. The van der Waals epitaxial growth mode of Sb2Se3 nanowires on WS2 monolayers is verified by stripping the Sb2Se3 nanowire from the heterostructures using tape. Together, the direct van der Waals epitaxy opens a facile pathway to 1D/2D mixed-dimensional heterostructures for functional electronic and optoelectronic devices.
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