4.8 Article

Sub-millimeter-Scale Growth of One-Unit-Cell-Thick Ferrimagnetic Cr2S3 Nanosheets

期刊

NANO LETTERS
卷 19, 期 3, 页码 2154-2161

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b00386

关键词

Cr2S3; ferrimagnetic; nonlayered; van der Waals epitaxial growth

资金

  1. Ministry of Science and Technology of China [2016YFA0200700]
  2. National Natural Science Foundation of China [61625401, 21703047, 61474033, 61574050, 11674072, 51722204]
  3. CAS Key Laboratory of Nanosystem and Hierarchical Fabrication
  4. National Key Basic Research Program of China [2014CB931702]
  5. Sichuan Provincial Fund for Distinguished Young Academic and Technology Leaders [2014JQ0011]
  6. Fundamental Research Funds for the Central Universities [ZYGX2016Z004, ZYGX2018J036]
  7. Sichuan Science and Technology Program [2018RZ0082]
  8. Youth Innovation Promotion Association CAS

向作者/读者索取更多资源

Two-dimensional (2D) magnetic materials provide an ideal platform for the application in spintronic devices due to their unique spin states in nanometer scale. However, recent research on the exfoliated monolayer magnetic materials suffers from the instability in ambient atmosphere, which needs extraordinary protection. Hence the controllable synthesis of 2D magnetic materials with good quality and stability should be addressed. Here we report for the first time the van der Waals (vdW) epitaxial growth of one-unit-cell-thick air-stable ferrimagnet Cr2S3 semiconductor via a facile chemical vapor deposition method. Single crystal Cr2S3 with the domain size reaching to 200 mu m is achieved. Most importantly, we observe the as grown Cr2S3 with a Neel temperature (T-N) of up to 120 K and a maximum saturation magnetic momentum of up to 6S mu emu. As the temperature decreases, the samples show a transition from soft magnet to hard magnet with the highest coercivity of 1000 Oe. The one-unit-cell-thick Cr2S3 devices show a p-type transfer behavior with an on/off ratio over 10(3). Our work highlights Cr2S3 monolayer as an ideal magnetic semiconductor for 2D spintronic devices. The vdW epitaxy of nonlayered magnets introduces a new route for realizing magnetism in 2D limit and provides more application potential in the 2D spintronics.

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