期刊
NANO LETTERS
卷 19, 期 3, 页码 1494-1503出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b04099
关键词
3D; graphene; FET; photodetector; THz
类别
资金
- National Natural Science Foundation of China [61604009]
- Fundamental Research Funds for the Central Universities [2018JBM002]
- Beijing Municipal Natural Science Foundation [4164095]
Graphene is an ideal material for high-performance photodetectors because of its superior electronic and optical properties. However, graphene's weak optical absorption limits the photoresponsivity of conventional photodetectors based on planar (two-dimensional or 2D) back-gated graphene field-effect transistors (GFETs). Here, we report a self-rolled-up method to turn 2D buried-gate GFETs into three-dimensional (3D) tubular GFETs. Because the optical field inside the tubular resonant microcavity is enhanced and the light-graphene interaction area is increased, the photoresponsivity of the resulting 3D GFETs is significantly improved. The 3D GFET photodetectors demonstrated room-temperature photodetection at ultraviolet, visible, mid-infrared, and terahertz (THz) regions, with both ultraviolet and visible photoresponsivities of more than 1 A W-1 and photoresponsivity of 0.232 A W-1 at 3.11 THz. The electrical bandwidth of these devices exceeds 1 MHz. This combination of high photoresponsivity, a broad spectral range, and high speed will lead to new opportunities for 3D graphene optoelectronic devices and systems.
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