期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
卷 37, 期 2, 页码 -出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.5085192
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资金
- Swedish Foundation for Strategic Research (SSF) [IS14-0027]
- Swedish Government Strategic Research Area in Materials Science on Advanced Functional Materials at Linkoping University [2009-00971]
- Swedish Foundation for Strategic Research (SSF) [IS14-0027] Funding Source: Swedish Foundation for Strategic Research (SSF)
Epitaxial rhombohedral boron nitride (r-BN) films were deposited on alpha-Al2O3(001) substrates by chemical vapor deposition, using trimethylboron, ammonia, and a low concentration of silane in the growth flux. The depositions were performed at temperatures from 1200 to 1485 degrees C, pressures from 30 to 90 mbar, and N/B ratios from 321 to 1286. The most favorable conditions for epitaxy were a temperature of 1400 degrees C, N/B around 964, and pressures below 40 mbar. Analysis by thin film x-ray diffraction showed that most deposited films were polytype-pure epitaxial r-BN with an out-of-plane epitaxial relationship of r-BN[001] parallel to w-AlN[001] parallel to alpha-Al2O3[001] and with two in-plane relationships of r-BN[110] parallel to w-AlN[110] parallel to alpha-Al2O3[100] and r-BN[110] parallel to w-AlN[110] parallel to alpha-Al2O3[(1) over bar 00] due to twinning. Published by the AVS.
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