期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 52, 期 22, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/ab0b96
关键词
spin orbit torque; topological insulators; magnetic random access memories
资金
- National Research Foundation (NRF), Prime Minister's Office, Singapore, under its Competitive Research Programme (CRP Award) [NRFCRP12-2013-01]
Current induced spin orbit torques (SOTs) offer an efficient pathway to manipulate the magnetization of a ferromagnet for future magnetic memories and logic devices. Among the various non-magnets utilized, the topological insulators, such as Bi2Se3, have proven to be one of most efficient spin current generators for SOTs. So far, the preferred growth technique for such materials is the molecular beam epitaxy technique which is not compatible with the magnetic memory industry. In this study, we utilize a sputter deposited Bi2Se3 to demonstrate highly efficient SOT generation and subsequently magnetization switching.
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