4.8 Article

Oxide Analogs of Halide Perovskites and the New Semiconductor Ba2AglO6

期刊

JOURNAL OF PHYSICAL CHEMISTRY LETTERS
卷 10, 期 8, 页码 1722-1728

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.9b00193

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资金

  1. Graphene Flagship (Horizon 2020) [696656]
  2. Leverhulme Trust [RL-2012-001]
  3. UK Engineering and Physical Sciences Research Council [EP/M005143/1, EP/J009857/1, EP/M020517/1, EP/L024667/1]
  4. EPSRC [EP/S004947/1, EP/M020517/1, EP/L024667/1, EP/M024881/1, EP/M005143/1, EP/J009857/1] Funding Source: UKRI
  5. Engineering and Physical Sciences Research Council [EP/M024881/1, EP/S004947/1] Funding Source: researchfish

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The past few years witnessed the rise of halide perovskites as prominent materials for a wide range of optoelectronic applications. However, oxide perovskites have a much longer history and are pivotal in many technological applications. As of today, a rational connection between these important materials is missing. Here, we explore this missing link and develop a novel concept of perovskite analogs, which led us to identify a new semiconductor, Ba2AgIO6. It exhibits an electronic band structure remarkably similar to that of our recently discovered halide double perovskite Cs2AgInCl6, but with a band gap in the visible range at 1.9 eV. We show that Ba2AgIO6 and Cs2AgInCl6 are analogs of the well-known transparent conductor BaSnO3. We synthesize Ba2AgIO6 following a low-temperature solution process, and we perform crystallographic and optical characterizations. Ba2AgIO6 is a cubic oxide double perovskite with a direct low gap, opening new opportunities in perovskite-based electronics optoelectronics and energy applications.

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