期刊
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
卷 30, 期 9, 页码 8796-8804出版社
SPRINGER
DOI: 10.1007/s10854-019-01204-4
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- WBDITE [617-JS(IT)/P/08/2009]
The current work focuses on the incorporation of excess amount of gallium (Ga) in zinc oxide (ZnO) nanowires to generate oxygen interstitials for developing p-type conductivity. Ga has been used as an n-type dopant in ZnO lattice by reducing its inherent vacancies up to 3% molar ratio of Ga and Zn employing chemical bath deposition technique. However, the addition of more than 4% of gallium nitrate in the bath solution creates oxygen interstitials which are confirmed from the presence of X-ray photoelectron spectroscopy (XPS) peak at 532.6eV and the relevant cathodoluminescence (CL) peak at 626nm of the grown Ga-doped ZnO nanowires. The p-type conductivity of such ZnO nanowires has been confirmed from current-voltage, capacitance-voltage and Hall voltage measurements. The reproducibility of the results indicates the incorporation of excess Ga to be a promising technique for growing p-type ZnO nanowires.
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