4.5 Article Proceedings Paper

LDA plus U Calculation of Electronic and Thermoelectric Properties of Doped Tetrahedrite Cu12Sb4S13

期刊

JOURNAL OF ELECTRONIC MATERIALS
卷 48, 期 4, 页码 2018-2021

出版社

SPRINGER
DOI: 10.1007/s11664-019-06960-x

关键词

Tetrahedrites; thermoelectric; DFT; BoltzTrap

资金

  1. Czech Science Foundation [18-12761S]
  2. programme Projects of Large Research, Development, and Innovations Infrastructures [CESNET LM2015042]

向作者/读者索取更多资源

Tetrahedrite-based thermoelectric materials have received much attention in recent years due to their good thermoelectric performance and earth-abundance. The parent compound Cu12Sb4S13 exhibits a high power factor and low lattice thermal conductivity. Further enhancement of the thermoelectric figure of merit ZT is expected in substituted compounds, primarily at the Cu site Cu12-xMxSb4S13. In this work we have studied the impact of substitution effects on thermoelectric properties using density-functional theory electronic structure calculations in combination with calculation of electrical transport properties by the BoltzTrap program.

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