Catalyst-free growth of single crystalline β-Ga2O3 microbelts on patterned sapphire substrates

The high density and large quantity beta-Ga2O3 microbelts were synthesized by changing the growth temperature on patterned sapphire substrates (PSS) by chemical vapor deposition equipment. The width of the microbelts was about 1-1.5 mu m and the length was about 15 The results of different growth temperature influenced for surface morphology and crystal structure of beta-Ga2O3 indicated that the optimal growth temperature of beta-Ga2O3 microbelts was at 900 degrees C. Furthermore, the growth mechanism of microbelts was also studied. It was found that the hemispherical PSS played an important role for beta-Ga2O3 microbelts formation. The optical absorption spectrum indicated that optical band gap energy of microbelts was about 4.78 eV.