期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 58, 期 -, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/1347-4065/aafa6a
关键词
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资金
- Korea Institute of Science and Technology [2E28000, 2E28070]
- Make Our Planet Great Again-German Research Initiative (MOPGA-GRI) project fund of DAAD
- Ministry of Science & ICT (MSIT), Republic of Korea [2E28000] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
For over a decade, phase-change materials have been widely researched using various materials and methods. Despite efforts, the design of novel materials is nowhere near reported. In this paper, we provide the data for doping in In3SbTe2 material with doping formation energy and distortion angle at In, Sb, and Te sites. Information on the 29 dopants reduces unnecessary time cost to select the dopant for the lST material since the dopant with the positive and big formation energy should be excluded. In addition, excessive dopants disturb the stable phase transition, for this reason, the approximate limit of concentration for doping is suggested with experimental results through XRD, TEM, and electrical characteristics. This study gives one guideline of the many methods to develop and discover the novel materials in terms of substitutional site and the amount of dopant. (C) 2019 The Japan Society of Applied Physics
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