期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 66, 期 1, 页码 337-343出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2018.2885734
关键词
Cross section; failure in time (FIT); heavy ion; Monte Carlo; MOSFET; Monte Carlo radiative energy deposition (MRED); neutron; power; silicon carbide (SiC); single-event burnout (SEB)
资金
- NASA ESI Program [NNX17AD09G]
- NASA Goddard through NEPP Program
- ESA/ESTEC [4000111630/14/NL/PA]
- Academy of Finland Project [2513553]
- NASA [NNX17AD09G, 1003281] Funding Source: Federal RePORTER
Cross sections and failure in time rates for neutron-nduced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simu-ations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data.
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