Design of Transistors Using High-Permittivity Materials

The design and modeling of dielectric superjunction transistors using combinations of ultrahigh permittivity materials and high-mobility materials are described. We show that placing high dielectric permittivity materials in the gate-drain depletion region can reduce electric field variations by screening the field due to depleted charges. This enables simultaneously high sheet charge density and breakdown voltage for scaled field-effect transistors. Using detailed 2-D device simulation of dc and high frequency characteristics, we show that extreme dielectric constant engineering provides unique opportunities for transistor design and has the potential to perform better than state-of-the-art millimeter-wave and terahertz frequency transistors.