期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 66, 期 2, 页码 876-882出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2883573
关键词
p-GaN HEMT; carrier transport mechanisms; electron trapping; gate stress; hole injection; threshold voltage shift
资金
- National Natural Science Foundation of China [61674024]
- Assembly Pre-Research Project [JZX2017-1643/Y537]
- National Science and Technology Major Project [2013ZX02308-005]
- opening project of the State Key Laboratory of Electronic Thin Films and Integrated Devices [KFJJ201609]
- Fundamental Research Funds for the Central Universities [ZYGX2016J211]
The threshold voltage (V-TH) instability of p-GaN/AlGaN/GaN HEMTs was investigated under forward gate stress. A unique bidirectional V-TH shift (Delta V-TH) with the critical gate voltage (V-G) of 6 V was observed. The carrier transport mechanisms underlying the Delta V-TH were extensively investigated through the voltage-dependent, time-resolved, and temperature-dependent gate current. The gate current is decomposed into electron and hole current in three distinct regions with respect to V-G, which are off-state for V-G < 1.2 V (V-TH), on-state for 1.2 V < V-G < 5 V and gate-injected region for V-G > 5 V. In off-state, the electrons were thermally activated and transport towards the gate, while electron-trapping governed by the space charge limited conduction (SCLC) in AlGaN barrier was observed in on-state and gate-injected region. Such an electron-trapping effect results in the positive V-TH shift for V-G < 6 V. Meanwhile, the marginal hole transport from gate by thermal activation was also captured by gate current, which features negligible impact on V-TH. However, for V-G > 6 V, a drastic hole injection triggered by high V-G takes place that causes subsequent hole-trapping in AlGaN barrier and hole-injection into GaN buffer. The injected holes enhance the positive charge in the gate region and turned the positively shifted V-TH into a negative shift.
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