期刊
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
卷 29, 期 2, 页码 140-142出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2018.2886066
关键词
Front end; gallium nitride (GaN); high efficiency; low noise; single chip
资金
- Rheinmetall Rome, Italy
This contribution presents a single-chip front end (SCFE) in a 0.25-mu m commercial gallium nitride process conceived for S-band active electronically scanned array applications. The realized SCFE integrates the switching, high-power amplification (HPA) and low-noise amplification (LNA) functionalities, which are required by a half-duplex Tx/Rx module, on the same monolithic microwave integrated circuit, resulting in 7 x 7 mm(2) chip area. In order to maximize the efficiency and power performances, the HPA was conceived to work in class F, whereas the LNA was optimized for lower drain bias voltage. As compared to the first realization of this chip, such expedients lead to an output power and efficiency improvement of about 0.8 dB and four percentage points, respectively, and a reduction of the power consumption in Rx-mode of about 35%, without compromising noise figure (NF) and gain. Moreover, over a 13% fractional bandwidth in the lower part of the S-band, the SCFE achieves 1.8 and 30 dB of NF and gain, respectively, in Rx-mode, and more than 46.5 dBm, 48%, and 36 dB, of output power, efficiency, and gain, respectively, in Tx-mode.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据