期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 55, 期 1, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2018.2883158
关键词
GaN; ultraviolet; light-emitting diode
资金
- Ministry of Science and Technology (MOST) [NSC104-2923-E-009-135-MY3, MOST 104-2221-E-009-096-MY3]
- Lextar Corporation for Industry-University Collaboration Project
- R&D Program of Guangdong Province in China [2017A050501006]
Near-ultraviolet (NUV) light-emitting diodes (LEDs) have been used in several potential applications such as UV curing and biochemical sensors. However, the internal quantum efficiency (IQE) of NUV-LEDs is still a crucial issue. To improve the IQE, in this paper, an asymmetric triangular multiple quantum well (MQW) structure was used, which exhibited a higher emission efficiency and lower efficiency droop with nitrogen face-oriented inclination. This is in contrast to the trend observed in blue LEDs. Furthermore, we demonstrated that holes are more confined in MQWs with nitrogen face-oriented inclination than in MQWs with gallium face-oriented inclination. Moreover, simulations revealed that the IQE improved by approximately 32% compared with that of symmetric square MQWNUV-LEDs; this trend was also confirmed through experimental results. The external quantum efficiency of thin-film flip-chip LEDs with nitrogen face-oriented inclination MQWs was 52%.
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