期刊
IEEE ELECTRON DEVICE LETTERS
卷 40, 期 1, 页码 55-58出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2884325
关键词
Position sensitive detectors; van der Waals growth; heterostructure; SnSe; Si
资金
- National Natural Science Foundation of China [51502348]
- Natural Science Foundation of Shandong Province [ZR2016AM15]
- Open Foundation of the State Key Laboratory of Electronic Thin Films and Integrated Devices [KFJJ201606]
- Foundamental Research Funds for the Central Universities of China University of Petroleum [18CX02038A]
In this letter, optical position sensitive detectors (PSDs) based on SnSe/SiO2/Si heterostructures with an atomically abrupt interface are fabricated via the van der Waals (vdWs) growth of the large-area multilayered SnSe nanosheets on SiO2-buffered Si. The as-fabricated SnSe/SiO2/Si PSD device has a broadband photoresponse from visible to near-infrared light, especially showing an extremely high sensitivity up to 687.5 mV/mm under a relatively low laser power of 1.0 mW. The unique characteristics from the SnSe/Si vdWs interface are proposed to be the key factors to contribute to the excellent performance.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据