4.7 Article

Preparation and characterization of silsesquioxane-graphene oxide modified soluble polyimide nanocomposites with excellent dispersibility and enhanced tensile properties

期刊

EUROPEAN POLYMER JOURNAL
卷 112, 期 -, 页码 95-103

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.eurpolymj.2018.12.036

关键词

Silsesquioxane; Graphene oxide; Polyimide nanocomposite; Hybrid; Tensile strength and elongation at break

资金

  1. Ministry of Science and Technology of Taiwan, ROC [105-2221-E-007-006-, 105-3113-E-194-002-]
  2. boost program of Lower Carbon Energy Research Center in National Tsing Hua University [105N719CJ2, 106N510CE1]

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In this study, a facile synthetic approach was demonstrated for the preparation of graphene oxide (GO)-modified soluble polyimide (SPI) nanocomposites with enhanced mechanical properties. Firstly, a two-step method was employed to form SPI via polymerization of cycloaliphatic dianhydride (bicyclo [2,2,2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride) and aromatic diamine (2,2'-Bis[4-(4-aminophenoxy)phenyl]propane). Amino-substituted silsesquioxane (SQ) was used to conjugate with GO to form SQ-grafted graphene oxide (SQ@GO) and thermally-treated SQ@GO (TSQ@GO). Fourier-transformed infrared spectroscopy, Si-29 nuclear magnetic resonance spectroscopy, scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectrometry were used complementarily for the study of the chemical structures of the prepared SQ@GO, TSQ@GO and SPI/TSQ@GO nanocomposite film (i.e., TSQ@GO in SPI matrix). Results show successful synthesis of SQ@GO, TSQ@GO and SPI/TSQ@GO nanocomposite film. With support of excellent dispersibility of TSQ@GO in SPI matrix, the tensile properties of SPI improved significantly via hybridization with TSQ@GO: tensile strength enhanced to 1.3X and elongation at break increased to 3 folds. This study demonstrated a prototype method for fabrication of pre-imidized SPI/TSQ@GO nanocomposite, which has shown the promise for moderate-temperature manufacture (below 200 degrees C) of emerging electronic applications.

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