期刊
CERAMICS INTERNATIONAL
卷 45, 期 2, 页码 2483-2491出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2018.10.175
关键词
SiC; Coupling effect; Deformation; Molecular dynamics
资金
- Foundation of China [51705233]
- Natural Science Foundation of Guangdong Province [2018A030310125]
- National Natural Science
In this study, the influence mechanism of the coupling effect on the material removal process of SiC in nanoscale condition is investigated using the molecular dynamics method. The geometrical characteristics of a machined surface and the damage distribution under a coupling effect are analyzed. The influence law of the coupling effect on surface/subsurface features is also presented. According to the analysis results, the repeated and interference scratches with multi-abrasives, large-area machined surface morphology, and damage distribution are analyzed. This study is significant in understanding the removal mechanism of SiC during the grinding process at the nanoscale.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据