相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Structural, electronic, elastic and lattice dynamical properties of CdIn2Te4 under pressure from first principle
Shaobo Zhang et al.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B (2018)
Analysis of current conduction mechanism in CZTSSe/n-Si structure
M. Terlemezoglu et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2018)
Study on the electrical properties of ZnSe/Si heterojunction diode
H. H. Gullu et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2017)
Influence of ZnTe intrinsic layer on the performance of p-ZnTe/n-Si heterojunctions
Kaifeng Qin et al.
SURFACE & COATINGS TECHNOLOGY (2017)
TEM study on HgIn2Te4 precipitates in Hg3In2Te6 crystals grown by the Bridgman method
Lin Luo et al.
CRYSTENGCOMM (2014)
Fabrication and characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes
Gowrish K. Rao et al.
CURRENT APPLIED PHYSICS (2013)
Structural and optical properties of Zn-In-Te thin films deposited by thermal evaporation technique
H. H. Gullu et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2013)
Ternary compound CuInTe2: a promising thermoelectric material with diamond-like structure
Ruiheng Liu et al.
CHEMICAL COMMUNICATIONS (2012)
Ag doped ZnTe films prepared by closed space sublimation and an ion exchange process
Akram K. S. Aqili et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2012)
Analysis of the series resistance and interface states of Au/Si3N4/n-Si (metal-insulator-semiconductor) Schottky diodes using I-V characteristics in a wide temperature range
F. Z. Pur et al.
PHYSICA SCRIPTA (2012)
The analysis of I-V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height
Ilbilge Dokme
MICROELECTRONICS RELIABILITY (2011)
Studies on device properties of an n-AgIn5Se8/p-Si heterojunction diode
M. Kaleli et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2011)
Frequency-dependent Capacitance-Voltage and Conductance-Voltage Characteristics of Low-dielectric-constant SiOC(-H) Thin Films Deposited by Using Plasma-enhanced Chemical Vapor Deposition
Chang Young Kim et al.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY (2010)
The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I-V characteristics
A. Tataroglu et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2009)
A detailed study of current-voltage characteristics in Au/SiO2/n-GaAs in wide temperature range
H. Altuntas et al.
MICROELECTRONICS RELIABILITY (2009)
Analysis of temperature dependent I-V measurements on Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant
W. Mtangi et al.
PHYSICA B-CONDENSED MATTER (2009)
Electrical properties and transport mechanisms of p-znte/n-si heterojunctions
M. A. M. Seyam et al.
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS (2008)
Gaussian distribution of inhomogeneous barrier height in Al/SiO2/p-Si Schottky diodes
D. E. Yildiz et al.
JOURNAL OF APPLIED PHYSICS (2008)
Analysis of electrical characteristics of Au/SiO2/n-Si (MOS) capacitors using the high-low frequency capacitance and conductance methods
A. Tataroglu et al.
MICROELECTRONIC ENGINEERING (2008)
Photoelectrochemical properties of spray deposited n-ZnIn2Se4 thin films
S. P. Yadav et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2008)
Optoelectronic properties of ZnTe/Si heterostructures formed by nanosecond laser deposition at different Nd:YAG laser lines
K. P. Acharya et al.
THIN SOLID FILMS (2007)
Observation of ultra-broadband terahertz emission from ZnTe films grown by metaloganic vapor epitaxy
Qixin Guo et al.
SOLID STATE COMMUNICATIONS (2007)
High resistivity In-doped ZnTe: electrical and optical properties
DN Bose et al.
BULLETIN OF MATERIALS SCIENCE (2005)
Studies of sputtered ZnTe films as interlayer for the CdTe thin film solar cell
B Späth et al.
THIN SOLID FILMS (2005)
The role of interface states and series resistance on the I-V and C-V characteristics in Al/SnO2/p-Si Schottky diodes
S Altindal et al.
SOLID-STATE ELECTRONICS (2003)
Optical properties and electronic band structure of ZnIn2Te4 -: art. no. 085208
S Ozaki et al.
PHYSICAL REVIEW B (2001)